Semiconductor chip and electronic apparatus

ABSTRACT

The present technology relates to a semiconductor chip and an electronic apparatus that can suppress degradation of optical characteristics of a semiconductor chip including an image pickup device. A semiconductor chip includes: an image pickup device; a transparent protective member that protects the image pickup device; an IR cut film arranged between a light-receiving surface of the image pickup device and the protective member; a bonding layer that bonds the IR cut film and the protective member together; and a protective film that covers side surfaces of the IR cut film and the bonding layer. The present technology can be applied to, for example, a semiconductor chip for an image pickup device.

TECHNICAL FIELD

The present technology relates to a semiconductor chip and an electronicapparatus, and in particular relates to a semiconductor chip and anelectronic apparatus that include an image pickup device.

BACKGROUND ART

Conventionally, in a semiconductor chip including an image pickupdevice, it has been devised to form a coating type IR cut filter (IRCF)between the image pickup device and a glass substrate that protects theimage pickup device (see, for example, Patent Document 1).

CITATION LIST Patent Document

-   Patent Document 1: Japanese Patent Application Laid-Open No.    2014-130344

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

For the coating type IRCF, a metal complex material such as a coppercomplex is generally used, but this material is easily degraded byoxidation. However, in the invention described in Patent Document 1, itis assumed that outside air enters through an adhesive portion providedin order to bond the image pickup device and the glass substratetogether in the periphery of the image pickup device and the IRCF isoxidized. As a result, light-shielding performance of the IRCF isdegraded, and optical characteristics of the semiconductor chip aredegraded.

In addition, since a glass substrate having a thickness of at least 200μm is generally used, the thickness is a factor that prevents downsizingof the semiconductor chip.

The present technology has been made in view of such a situation, and isintended to suppress degradation of the optical characteristics of thesemiconductor chip including the image pickup device.

In addition, the present technology is intended to downsize thesemiconductor chip.

Solutions to Problems

A semiconductor chip of a first aspect of the present technologyincludes: an image pickup device; a transparent protective member thatprotects the image pickup device; an IR cut film arranged between alight-receiving surface of the image pickup device and the protectivemember; a bonding layer that bonds the IR cut film and the protectivemember together; and a protective film that covers side surfaces of theIR cut film and the bonding layer.

The protective film can be made to further cover at least a portion of aside surface of the image pickup device.

The IR cut film and the bonding layer can each include an adhesive typeIR cut film having adhesiveness, and the image pickup device and theprotective member can be bonded together via the adhesive type IR cutfilm.

In the IR cut film, a plurality of IR cut filters having respectivedifferent light-shielding wavelength bands can be layered.

Metal solder having a melting point of less than or equal to 150° C. canbe provided on a surface to be soldered of the semiconductor chip.

A reflective type IR cut film can be formed on at least one surface ofthe protective member.

The IR cut film can be a coating type.

An electronic apparatus of a second aspect of the present technologyincludes: a semiconductor chip including an image pickup device, atransparent protective member that protects the image pickup device, anIR cut film arranged between a light-receiving surface of the imagepickup device and the protective member, a bonding layer that bonds theIR cut film and the protective member together, and a protective filmthat covers side surfaces of the IR cut film and the bonding layer; anda signal processing circuit that processes a signal from the imagepickup device.

A semiconductor chip of a third aspect of the present technologyincludes: an image pickup device; a transparent protective member thatprotects the image pickup device; and an IR cut film arranged inside theprotective member.

The protective member can be provided with: a first member including aplanar groove in which the IR cut film is arranged, on a surface on anopposite side of the image pickup device from a light-receiving surfaceside; and a second member that seals the groove, and a bonding layerthat bonds the IR cut film and the second member together can be furtherprovided.

An electronic apparatus of a fourth aspect of the present technologyincludes: a semiconductor chip including an image pickup device, atransparent protective member that protects the image pickup device, andan IR cut film arranged inside the protective member; and a signalprocessing circuit that processes a signal from the image pickup device.

A semiconductor chip of a fifth aspect of the present technologyincludes: an image pickup device, and a transparent resin film that isapplied on a light-receiving surface side of the image pickup device andprotects the image pickup device.

The thickness of the resin film can be made less than 200 μm.

An IR cut film can be arranged on the resin film.

An antireflection film can be arranged on the IR cut film.

The antireflection film can be made to further surround side surfaces ofthe resin film and the IR cut film.

A diffraction grating can be formed on a surface of the resin film.

The diffraction grating can be provided with a slit-shapedlight-shielding film.

A transparent film can be arranged on an on-chip lens of the imagepickup device, the transparent film having a refractive index smallerthan a material of the on-chip lens.

An electronic apparatus of a sixth aspect of the present technologyincludes: a semiconductor chip including an image pickup device and atransparent resin film that is applied on a light-receiving surface sideof the image pickup device and protects the image pickup device; and asignal processing circuit that processes a signal from the image pickupdevice.

In the first or second aspect of the present technology, the IR cut filmis surrounded by the image pickup device, the protective member, and theprotective film.

In the third or fourth aspect of the present technology, the IR cut filmis surrounded by the protective member.

In the fifth or sixth aspect of the present technology, thelight-receiving surface of the image pickup device is protected by theprotective film.

Effects of the Invention

According to the first to fourth aspects of the present technology, thedegradation can be suppressed of the optical characteristics of thesemiconductor chip including the image pickup device.

According to the fifth or sixth aspect of the present technology,downsizing can be achieved of the semiconductor chip.

Note that, the effects described in the present specification are merelyexamples, and the effects of the present technology are not limited tothe effects described in the specification, and may have additionaleffects.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a cross-sectional view schematically illustrating aconfiguration example of a semiconductor chip according to a firstembodiment of the present technology.

FIG. 2 is a diagram for describing a method of manufacturing thesemiconductor chip of FIG. 1.

FIG. 3 is a diagram for describing the method of manufacturing thesemiconductor chip of FIG. 1.

FIG. 4 is a cross-sectional view schematically illustrating a firstmodification of the semiconductor chip of FIG. 1.

FIG. 5 is a cross-sectional view schematically illustrating a secondmodification of the semiconductor chip of FIG. 1.

FIG. 6 is a cross-sectional view schematically illustrating a thirdmodification of the semiconductor chip of FIG. 1.

FIG. 7 is a cross-sectional view schematically illustrating a fourthmodification of the semiconductor chip of FIG. 1.

FIG. 8 is a cross-sectional view schematically illustrating a fifthmodification of the semiconductor chip of FIG. 1.

FIG. 9 is a cross-sectional view schematically illustrating a sixthmodification of the semiconductor chip of FIG. 1.

FIG. 10 is a cross-sectional view schematically illustrating aconfiguration example of a semiconductor chip according to a secondembodiment of the present technology.

FIG. 11 is a diagram for describing a method of manufacturing thesemiconductor chip of FIG. 10.

FIG. 12 is a diagram for describing the method of manufacturing thesemiconductor chip of FIG. 10.

FIG. 13 is a diagram for describing the method of manufacturing thesemiconductor chip of FIG. 10.

FIG. 14 is a cross-sectional view schematically illustrating a firstmodification of the semiconductor chip of FIG. 10.

FIG. 15 is a diagram for describing a method of manufacturing thesemiconductor chip of FIG. 14.

FIG. 16 is a cross-sectional view schematically illustrating a secondmodification of the semiconductor chip of FIG. 10.

FIG. 17 is a cross-sectional view schematically illustrating a thirdmodification of the semiconductor chip of FIG. 10.

FIG. 18 is a diagram for describing a method of manufacturing thesemiconductor chip of FIG. 17.

FIG. 19 is a cross-sectional view schematically illustrating a fourthmodification of the semiconductor chip of FIG. 10.

FIG. 20 is a cross-sectional view schematically illustrating a fifthmodification of the semiconductor chip of FIG. 10.

FIG. 21 is a cross-sectional view schematically illustrating a sixthmodification of the semiconductor chip of FIG. 10.

FIG. 22 is a cross-sectional view schematically illustrating a seventhmodification of the semiconductor chip of FIG. 10.

FIG. 23 is a block diagram illustrating a configuration example of anembodiment of an imaging apparatus to which the present technology isapplied.

FIG. 24 is a diagram illustrating usage examples of an image sensor.

MODE FOR CARRYING OUT THE INVENTION

The following is a description of a mode for carrying out the presenttechnology (the mode will be hereinafter referred to as the embodiment).Note that, the description will be made in the following order.

1. First Embodiment

2. Modifications of First Embodiment

3. Second Embodiment

4. Modifications of Second Embodiment

5. Application Examples

1. First Embodiment

{Configuration Example of Semiconductor Chip}

FIG. 1 is a cross-sectional view schematically illustrating aconfiguration example of a semiconductor chip 10 a according to a firstembodiment of the present technology.

Note that, in the following, a side of the semiconductor chip 10 a onwhich light is incident is defined as an upper side of the semiconductorchip 10 a, and an opposite side of the semiconductor chip 10 a from theside on which the light is incident is defined as a lower side. Inaddition, in the following, a surface of an image sensor 11 on which thelight is incident is referred to as a light-receiving surface, and asurface on an opposite side from the light-receiving surface is referredto as a bottom surface. This also applies to other semiconductor chipsas described later.

The semiconductor chip 10 a is a semiconductor chip having a Chip SizePackage (CSP) structure, and the image sensor 11, an IR cut film 12, abonding layer 13, and a glass 14 are layered in order from the bottom.

The type of the image sensor 11 is not particularly limited. Forexample, the image sensor 11 may be a front side illumination type or aback side illumination type. In addition, for example, the image sensor11 may be a CMOS image sensor, a CCD image sensor, or an image sensor ofanother type.

The IR cut film 12 includes, for example, a coating type IR cut filterincluding a metal complex material such as a copper complex. The IR cutfilm 12 reduces an infrared light component contained in incident lightand suppresses incidence of infrared light to the image sensor 11.

The glass 14 is provided to protect the image sensor 11.

The IR cut film 12 and the glass 14 are bonded together via the bondinglayer 13. The bonding layer 13 includes, for example, a transparentsealing resin or an adhesive.

Here, areas of the image sensor 11, the IR cut film 12, and the bondinglayer 13 are slightly smaller than the glass 14, and side surfaces ofthe image sensor 11, the IR cut film 12, and the bonding layer 13 arearranged inside from side surfaces of the glass 14. Then, the sidesurfaces of the image sensor 11, the IR cut film 12, and the bondinglayer 13 are covered with a protective film 15, and positions of theside surface of the glass 14 and the outer surface of the protectivefilm 15 substantially coincide with each other. The protective film 15includes, for example, silicon nitride (SiN), silicon oxynitride film(SiON), or a metal such as aluminum or titanium.

A plurality of solder balls 16 is provided on the bottom surface of theimage sensor 11, the bottom surface being a surface on which thesemiconductor chip 10 a is to be soldered to a substrate or the like.For the solder balls 16, for example, an alloy of lead and tin is used.

{Method of Manufacturing Semiconductor Chip 10 a}

Next, a method of manufacturing the semiconductor chip 10 a will bebriefly described with reference to FIGS. 2 and 3.

First, in process 1, the IR cut film 12 is layered on thelight-receiving surface side of the image sensor 11. The IR cut film 12is formed, for example, by using a spin coating method to apply anddeposit an IR cut filter on the upper surface of the image sensor 11.Then, the IR cut film 12 is cured by heat of about 150° C.

Here, since the IR cut film 12 is a coating film, control of theparticles is possible, and as a result, the yield is improved. Inaddition, since the IR cut film 12 is not deposited on the glass 14,polishing for scratch removal is possible. Further, since the IR cutfilm 12 is not deposited on the glass 14, the glass 14 is polished andthinned in the final process, so that it is possible to reduce theheight of the semiconductor chip 10 a.

In process 2, the IR cut film 12 and the glass 14 are bonded together.For example, the spin coating method is used to apply and deposit asealing resin on the upper surface of the IR cut film 12, whereby thebonding layer 13 is formed. Next, after the glass 14 is pasted to theupper surface of the bonding layer 13, the bonding layer 13 is cured,and the IR cut film 12 and the glass 14 are bonded together.

In process 3, a silicon substrate (not illustrated) of the image sensor11 is thinned, and further a redistribution layer (RDL) (notillustrated) is formed.

In process 4, a groove 31 is formed for forming the protective film 15.For example, the groove 31 is formed on the outer periphery of the imagesensor 11, the IR cut film 12, and the bonding layer 13, along a scribeline of the image sensor 11, by using a dry etching method. Note that,instead of the dry etching method, the groove 31 may be formed by usinga dicer or a laser.

In process 5, the protective film 15 is formed. For example, plasmanitride (P-SiN) is used to deposit a nitride film in the groove 31,whereby the protective film 15 is formed. The surface of the protectivefilm 15 formed is planarized by etch back.

In process 6, the solder balls 16 are formed on the bottom surface ofthe image sensor 11, and the manufacturing process of the semiconductorchip 10 a is completed.

As described above, in the semiconductor chip 10 a, the IR cut film 12is arranged in a region surrounded by the image sensor 11, the glass 14,and the protective film 15. Therefore, entering of outside air into theperiphery of the IR cut film 12 is prevented, and it is prevented thatthe IR cut film 12 is oxidized and the optical characteristics of thesemiconductor chip 10 a are degraded.

Note that, the protective film 15 does not necessarily cover the entireside surface of the image sensor 11 but may cover only the upper portionof the side surface of the image sensor 11, for example.

2. Modifications of First Embodiment

{First Modification}

FIG. 4 is a cross-sectional view schematically illustrating aconfiguration example of a semiconductor chip 10 b that is a firstmodification of the semiconductor chip according to the firstembodiment.

The semiconductor chip 10 b differs from the semiconductor chip 10 a ofFIG. 1 in that the IR cut film 12 portion has a two-layer structure of ashort IR cut film 51 and a long IR cut film 52.

The short IR cut film 51 and the long IR cut film 52 have respectivedifferent infrared light-shielding wavelength bands (light-shieldingbands). The light-shielding band of the short IR cut film 51 covers aband in which the wavelength is shorter than that of the long IR cutfilm 52, and the light-shielding band of the long IR cut film 52 coversa band in which the wavelength is longer than that of the short IR cutfilm 51. Note that, the light-shielding band of the short IR cut film 51and the light-shielding band of the long IR cut film 52 may partiallyoverlap each other.

As described above, the IR cut films having respective differentlight-shielding bands are layered, and the light-shielding wavelengthband is divided, whereby light-shielding performance is improved.

Note that, for example, at least three IR cut films may be layered, andthe light-shielding band may be further divided.

{Second Modification}

FIG. 5 is a cross-sectional view schematically illustrating aconfiguration example of a semiconductor chip 10 c that is a secondmodification of the semiconductor chip according to the firstembodiment.

The semiconductor chip 10 c differs from the semiconductor chip 10 b ofFIG. 4 in that solder balls 61 are formed instead of the solder balls16.

For the solder balls 61, for example, metal solder is used having a lowmelting point (for example, less than or equal to 150° C.) such as SnBi,SnBiAg, SnIn, or In.

The short IR cut film 51 and the long IR cut film 52 are generally weakagainst heat, and may not withstand the heat in a reflow process. On theother hand, by using the solder balls 61, it is possible to lower thetemperature of the reflow process as compared with a case where thegeneral solder balls 16 is used including an alloy of lead and tin. As aresult, in the reflow process, the short IR cut film 51 and the long IRcut film 52 are prevented from being damaged.

{Third Modification}

FIG. 6 is a cross-sectional view schematically illustrating aconfiguration example of a semiconductor chip 10 d that is a thirdmodification of the semiconductor chip according to the firstembodiment.

The semiconductor chip 10 d differs from the semiconductor chip 10 a ofFIG. 4 in that reflective type IR cut films 101 and 102 are formedrespectively on the upper surface and the lower surface of the glass 14.

The reflective type IR cut films 101 and 102 each include, for example,a reflective type IR cut filter in which inorganic films are layered.The reflective type IR cut films 101 and 102 are provided, for example,in a case where desired optical characteristics cannot be satisfied bythe IR cut film 12 alone.

Note that, for example, only one of the reflective type IR cut films 101and 102 may be provided.

{Fourth Modification}

FIG. 7 is a cross-sectional view schematically illustrating aconfiguration example of a semiconductor chip 10 e that is a fourthmodification of the semiconductor chip according to the firstembodiment.

The semiconductor chip 10 e differs from the semiconductor chip 10 a ofFIG. 1 in that an adhesive type IR cut film 121 is formed instead of theIR cut film 12 and the bonding layer 13.

The adhesive type IR cut film 121 includes, for example, an IR cutfilter having adhesiveness, and shields infrared light and also has afunction of bonding the image sensor 11 and the glass 14 together. Forthe adhesive type IR cut film 121, for example, a material is used inwhich metal complex materials are mixed, such as a copper complex usedfor an IR cut filter and a material used for a sealing resin.

As described above, instead of the two-layer structure of the IR cutfilm 12 and the bonding layer 13, a single layer structure of theadhesive type IR cut film 121 is formed, whereby the semiconductor chip10 e can be thinned.

{Fifth Modification}

FIG. 8 is a cross-sectional view schematically illustrating aconfiguration example of a semiconductor chip 10 f that is a fifthmodification of the semiconductor chip according to the firstembodiment.

The semiconductor chip 10 f differs from the semiconductor chip 10 a ofFIG. 1 in that an image sensor 141 and a protective film 142 areprovided instead of the image sensor 11 and the protective film 15.

The image sensor 141 has an area different from that of the image sensor11 of the semiconductor chip 10 a. Specifically, the area of the imagesensor 141 substantially coincides with the area of the glass 14.

The protective film 142 has a rib structure. Specifically, theprotective film 142 is formed, on the light-receiving surface of theimage sensor 141, to cover the side surfaces of the IR cut film 12 andthe bonding layer 13, along the outer periphery of the image sensor 141.

As described above, in the semiconductor chip 10 f, the IR cut film 12is arranged in a region surrounded by the image sensor 11, the glass 14,and the protective film 142. Therefore, it is prevented that the IR cutfilm 12 is oxidized due to entering of outside air into the periphery ofthe IR cut film 12 and the optical characteristics of the semiconductorchip 10 f are degraded.

{Sixth Modification}

FIG. 9 is a cross-sectional view schematically illustrating aconfiguration example of a semiconductor chip 10 g that is a sixthmodification of the semiconductor chip according to the firstembodiment.

The semiconductor chip 10 g differs from the semiconductor chip 10 f ofFIG. 8 in that instead of the IR cut film 12, the bonding layer 13, theglass 14, and the protective film 142, a bonding layer 201, a protectivemember 202, an IR cut film 203, and a bonding layer 204 are provided.The protective member 202 includes a glass 202 a and a glass 202 b thatare transparent.

The image sensor 141 and the glass 202 a are bonded together via thebonding layer 201. For the bonding layer 201, for example, a material isused similar to that of the bonding layer 13 of FIG. 1.

On the upper surface as an opposite side of the glass 202 a from thelight-receiving surface side of the image sensor 141, a planar groove isformed surrounded by the side surface of the glass 202 a. Then, the IRcut film 203 and the bonding layer 204 are layered in the groove. Forthe IR cut film 203, for example, a material is used similar to that ofthe IR cut film 12 of FIG. 1. In addition, the IR cut film 203 is formedin the groove by, for example, application or coating. For the bondinglayer 204, for example, a material is used similar to that of thebonding layer 201.

Then, the groove of the glass 202 a is sealed by the glass 202 b. Inaddition, the IR cut film 203 and the glass 202 b are bonded together bythe bonding layer 204, and the position of the glass 202 b is fixed.

As described above, in the semiconductor chip 10 g, the IR cut film 203is arranged in the protective member 202 including the glass 202 a andthe glass 202 b. Therefore, it is prevented that the IR cut film 12 isoxidized due to entering of outside air into the periphery of the IR cutfilm 203 and the optical characteristics of the semiconductor chip 10 fare degraded.

{Other Modifications}

The embodiment and the modifications described above can be combinedwithin a possible range.

For example, in the semiconductor chip 10 a, the semiconductor chip 10d, the semiconductor chip 10 e, the semiconductor chip 10 f, and thesemiconductor chip 10 g, the solder balls 61 may be used instead of thesolder balls 16.

In addition, for example, in the semiconductor chip 10 d, thesemiconductor chip 10 f, and the semiconductor chip 10 g, a two-layerstructure of a short IR cut film and a long IR cut film may be formed.

Further, instead of the glass 14, the glass 202 a, and the glass 202 b,a protective member may be used including a transparent material otherthan glass. For example, a material may be used, such as a transparentresin, or a heat-resistant transparent plastic.

3. Second Embodiment

{Configuration Example of Semiconductor Chip}

FIG. 10 is a cross-sectional view schematically illustrating aconfiguration example of a semiconductor chip 300 a according to asecond embodiment of the present technology.

In the semiconductor chip 300 a, a transparent resin film 306 is layeredon the light-receiving surface side where an on-chip lens 301A and acolor filter 301B of an image sensor 301 are formed, and a semiconductorsubstrate 302 is layered on the bottom surface side. In addition,redistribution layers (RDL) 304 a and 304 b are formed to penetrate thesemiconductor substrate 302. A portion of each of the lower surfaces ofthe RDL 304 a and the RDL 304 b is covered with solder resist 304, andsolder balls 305 a and 305 b are formed in a portion not covered withthe solder resist 304. Then, the image sensor 301 is electricallyconnected to an external substrate or the like via the solder balls 305a and 305 b, and the RDL 304 a and the RDL 304 b.

Similarly to the image sensor 11 of the semiconductor chip 10 a of FIG.1, the type of the image sensor 301 is not particularly limited. For theon-chip lens 301A, for example, an inorganic film is used such as a SiNfilm.

For the solder resist 304, for example, a resin material is used.

For the solder balls 305 a and 305 b, for example, a material is usedsimilar to that of the solder balls 16 of the semiconductor chip 10 a ofFIG. 1 or the solder balls 61 of the semiconductor chip 10 c of FIG. 5.

For the transparent resin film 306, for example, a transparent acrylicresin is used, and the transparent resin film 306 is provided to protectthe image sensor 11.

{Method of Manufacturing Semiconductor Chip 300 a}

Next, a method of manufacturing the semiconductor chip 300 a will bedescribed with reference to FIGS. 11 to 13. Note that, FIGS. 11 to 13each illustrate only one semiconductor chip 300 a portion in a wafer onwhich a plurality of the semiconductor chips 300 a is arranged.

First, in process 1, the image sensor 301 is manufactured.

In process 2, along the outer periphery of the light-receiving surfaceof the image sensor 301, a temporary bonding resin 401 is formed tosurround the periphery of a portion where the on-chip lens 301A and thecolor filter 301B are formed. Then, a glass substrate 402 is bonded tothe light-receiving surface of the image sensor 301 via the temporarybonding resin 401. The light-receiving surface of the image sensor 301is protected by the glass substrate 402.

In process 3, the semiconductor substrate 302 is bonded to the bottomsurface of the image sensor 301. Next, a through hole is formed in thesemiconductor substrate 302, and the RDLs 303 a and 303 b are formed viathe through hole. Next, the solder resist 304 is formed to cover thelower surfaces of the RDLs 303 a and 303 b except for portions where thesolder balls 305 a and 305 b are formed. Next, the solder balls 305 aand 305 b are formed in portions not covered with the solder resist 304of the RDLs 303 a and 303 b.

In process 4, a laminate tape 353 is pasted to surfaces of the solderresist 304 and the solder balls 305 a and 305 b. The thickness of thelaminate tape 353 is set to, for example, about 400 μm to 500 μm. Due tothe laminate tape 403, the lower surface of the wafer is planarized andthe thickness of the wafer is increased.

In process 5, the temporary bonding resin 401 and the glass substrate402 are peeled off. Here, since the thickness and the strength of thewafer are ensured by the laminate tape 403, even if the temporarybonding resin 401 and the glass substrate 402 are peeled off, occurrenceis prevented of distortion or deflection of the wafer.

In process 6, the transparent resin film 306 is formed on thelight-receiving surface of the image sensor 301. For example, the spincoating method is used to apply and deposit an acrylic resin on thelight-receiving surface of the image sensor 301, whereby the transparentresin film 306 is formed. The thickness of the transparent resin film306 is set to, for example, less than 200 μm, more desirably less thanor equal to 150 μm. More specifically, the thickness of the transparentresin film 306 is set to, for example, in the range of about 50 μm to150 μm.

In process 7, after the laminate tape 403 is peeled off, the wafer isdivided into individual pieces, whereby the semiconductor chip 300 a iscompleted. Note that, depending on the shipping form and the like, thelaminate tape 403 may be peeled off after the wafer is divided intoindividual pieces.

Note that, for example, the above processes may be performed by onemanufacturer, or may be performed by a plurality of manufacturers in ashared manner. For example, the processes up to process 6, and process 7may be performed by different manufacturers, respectively.

As described above, by using the coating type transparent resin film 306for protecting the image sensor 301, the semiconductor chip 300 a can bethinned and downsized as compared with a case where glass is used.

In addition, by thinning the transparent resin film 306, it is possibleto prevent the transparent resin film 306 from becoming a noisecomponent with respect to an optical signal in a wavelength region otherthan 400 to 700 nm that is human visibility.

4. Modifications of Second Embodiment

{First Modification}

FIG. 14 is a cross-sectional view schematically illustrating aconfiguration example of a semiconductor chip 300 b that is a firstmodification of the semiconductor chip according to the secondembodiment.

The semiconductor chip 300 b differs from the semiconductor chip 300 aof FIG. 10 in that an IR cut film 307 is layered on the transparentresin film 306.

For the IR cut film 307, for example, a material is used similar to thatof the IR cut film 12 of the semiconductor chip 10 a of FIG. 1. Inaddition, the thickness of the IR cut film 307 is set to, for example,less than or equal to 100 μm.

Next, a method of manufacturing the semiconductor chip 300 b will bedescribed with reference to FIG. 15.

For example, after the laminate tape 403 is peeled off in process 7 ofFIG. 13, in process 8, the spin coating method is used to apply anddeposit an IR cut filter on the surface of the transparent resin film306, whereby the IR cut film 307 is formed. Note that, in considerationof the heat resistance of the on-chip lens 301A, the color filter 301B,and the like, the IR cut film 307 is desirably deposited by a curingprocess of less than 200° C. Then, the wafer is divided into individualpieces, whereby the semiconductor chip 300 b is completed.

Note that, after process 6 of FIG. 13, the IR cut film 307 may be formedbefore the laminate tape 403 is peeled off.

As described above, the transparent resin film 306 and the IR cut film307 are continuously formed, whereby the semiconductor chip 300 b can bedownsized and the optical characteristics can be improved.

{Second Modification}

FIG. 16 is a cross-sectional view schematically illustrating aconfiguration example of a semiconductor chip 300 c that is a secondmodification of the semiconductor chip according to the secondembodiment.

The semiconductor chip 300 c differs from the semiconductor chip 300 bof FIG. 14 in that an antireflection film 308 is layered on the IR cutfilm 307.

For the antireflection film 308, for example, a SiO2 film, a SiON film,or a nitride film is used. In addition, the thickness of theantireflection film 308 is set to, for example, less than or equal to0.1 μm.

The antireflection film 308 is deposited, for example, by using aChemical Vapor Deposition (CVD) method or the spin coating method afterthe IR cut film 307 is formed in process 8 of FIG. 15 described above.

As described above, in the semiconductor chip 300 c, the antireflectionfilm 308 is provided, whereby the optical characteristics can be furtherimproved.

{Third Modification}

FIG. 17 is a cross-sectional view schematically illustrating aconfiguration example of a semiconductor chip 300 d that is a thirdmodification of the semiconductor chip according to the secondembodiment.

The semiconductor chip 300 d differs from the semiconductor chip 300 cof FIG. 16 in that an antireflection film 309 is formed instead of theantireflection film 308.

The antireflection film 309 covers not only the upper surface of the IRcut film 307 but also all the side surfaces of the transparent resinfilm 306 and the IR cut film 307, and covers the upper portion of theside surface of the image sensor 301. In addition, the thickness of theantireflection film 309 is set to, for example, less than or equal to0.1 μm.

The antireflection film 309 also has a function of the protective film,and prevents entering of moisture and outside air to the periphery ofthe IR cut film 307 and the light-receiving surface of the image sensor301. As a result, degradation of the image sensor 301 and the IR cutfilm 307 due to moisture, oxidation, and the like is suppressed, andreliability of the semiconductor chip 300 d is improved.

Next, a method of manufacturing the semiconductor chip 300 d will bedescribed with reference to FIG. 18.

For example, after process 8 of FIG. 13, in process 9, the wafer isdivided into individual pieces.

In process 10, the antireflection film 309 is formed. The method offorming the antireflection film 309 is not particularly limited.

{Fourth Modification}

FIG. 19 is a cross-sectional view schematically illustrating aconfiguration example of a semiconductor chip 300 e that is a fourthmodification of the semiconductor chip according to the secondembodiment.

The semiconductor chip 300 e differs from the semiconductor chip 300 aof FIG. 10 in that a diffraction grating is formed on the upper surfaceof the transparent resin film 306. Specifically, on the upper surface ofthe transparent resin film 306, grooves each having an inverted trianglecross section are periodically formed at predetermined intervals,whereby the diffraction grating is formed.

The diffraction grating is formed by an imprinting method, for example,after process 6 or process 7 of FIG. 13.

As a result, the transparent resin film 306 can be made to function as apolarizing filter.

{Fifth Modification}

FIG. 20 is a cross-sectional view schematically illustrating aconfiguration example of a semiconductor chip 300 f that is a fifthmodification of the semiconductor chip according to the secondembodiment.

The semiconductor chip 300 f differs from the semiconductor chip 300 eof FIG. 19 in that a slit-shaped light-shielding film 310 is formed onthe upper surface of the transparent resin film 306. The light-shieldingfilm 310 is formed by embedding a metal or the like in the groovesforming the diffraction grating of the transparent resin film 306. Inaddition, the material of the light-shielding film 310 may be anymaterial as long as it blocks light. For example, for thelight-shielding film 310, a metal material such as Al, Ti, Ta, W, or Cu,or a nitride film thereof is used.

Here, an example of a method of manufacturing the light-shielding film310 will be described.

For example, after the diffraction grating is formed on the uppersurface of the transparent resin film 306 illustrated in FIG. 19, thelight-shielding film 310 including metal or the like (for example, Al)is formed on the upper surface of the transparent resin film 306, forexample, by using a sputtering method. Next, for example, an etch backmethod is used to etch the entire surface of the light-shielding film310 until the upper end between the grooves of the transparent resinfilm 306 is exposed, whereby the slit-shaped light-shielding film 310 isformed.

By the light-shielding film 310, the function of the polarizing filterof the semiconductor chip 300 e is enhanced.

{Sixth Modification}

FIG. 21 is a cross-sectional view schematically illustrating aconfiguration example of a semiconductor chip 300 g that is a sixthmodification of the semiconductor chip according to the secondembodiment.

The semiconductor chip 300 g differs from the semiconductor chip 300 fof FIG. 20 in that the IR cut film 307 and the antireflection film 309are formed on the transparent resin film 306, similarly to thesemiconductor chip 300 d of FIG. 17. In other words, the semiconductorchip 300 g differs from the semiconductor chip 300 d in that theslit-shaped light-shielding film 310 is formed on the upper surface ofthe transparent resin film 306.

Due to the IR cut film 307 and the antireflection film 309, the opticalcharacteristics and reliability of the semiconductor chip 300 f areimproved, similarly to the semiconductor chip 300 c of FIG. 16 and thesemiconductor chip 300 d of FIG. 17 described above.

{Seventh Modification}

FIG. 22 is a cross-sectional view schematically illustrating aconfiguration example of a semiconductor chip 300 h that is a seventhmodification of the semiconductor chip according to the secondembodiment.

The semiconductor chip 300 h differs from the semiconductor chip 300 aof FIG. 10 in that a low refractive film 311 is formed on the on-chiplens 301A.

The low refractive film 311 includes a transparent resin film having asmaller refractive index than the on-chip lens 301A. The low refractivefilm 311 has a function to condense incident light on each microlens ofthe on-chip lens 301A, and as a result, sensitivity of the image sensor301 is improved.

For example, the low refractive film 311 is formed before thetransparent resin film 306 is formed between process 5 of FIG. 12 andprocess 6 of FIG. 13.

{Other Modifications}

The embodiment and the modifications described above can be combinedwithin a possible range.

For example, in the semiconductor chip 300 g, it is possible to use theantireflection film 308 of the semiconductor chip 300 c instead of theantireflection film 309, or to omit the antireflection film.

In addition, for example, in the semiconductor chips 300 b to 300 g, thelow refractive film 311 of the semiconductor chip 300 h may be provided.

5. Application Examples

{Applications to Electronic Apparatus}

Note that, the semiconductor chip of each of the above-describedembodiments can be applied to various electronic apparatuses such as animaging system such as a digital still camera or a digital video camera,a mobile phone having an imaging function, or another device having animaging function, for example.

FIG. 23 is a block diagram illustrating a configuration example of animaging apparatus mounted on an electronic apparatus.

As illustrated in FIG. 23, an imaging apparatus 500 includes an opticalsystem 501, an image pickup device 502, a signal processing circuit 503,a monitor 504, and a memory 505, and can capture still images and videoimages.

The optical system 501 includes one or a plurality of lenses, and guidesimage light (incident light) from a subject to the image pickup device502 to form an image on the light-receiving surface (sensor portion) ofthe image pickup device 502.

As the image pickup device 502, the semiconductor chip of each of theembodiments described above is applied. Electrons are accumulated in theimage pickup device 502 for a certain period in accordance with theimage formed on the light-receiving surface via the optical system 501.Then, a signal corresponding to the electrons accumulated in the imagepickup device 502 is supplied to the signal processing circuit 503.

The signal processing circuit 503 performs various types of signalprocessing on the signal output from the image pickup device 502. Animage (image data) obtained by performing signal processing by thesignal processing circuit 503 is supplied to the monitor 504 to bedisplayed, or supplied to the memory 505 to be stored (recorded).

In the imaging apparatus 500 configured as described above, thesemiconductor chip of each of the above-described embodiments isapplied, whereby the image quality and reliability of the imagingapparatus 500 can be improved, or the imaging apparatus 500 can bedownsized.

{Usage Examples of Image Sensor}

FIG. 24 is a diagram illustrating usage examples using an image sensormounted on the above-described semiconductor chip.

The above-described image sensor can be used for various cases ofsensing light such as visible light, infrared light, ultraviolet light,or X-rays, for example, as follows.

-   -   An apparatus that photographs an image to be used for        appreciation, such as a digital camera or a portable device with        a camera function    -   An apparatus to be used for traffic, such as an automotive        sensor for photographing ahead of, behind, around, inside a car,        and the like, a monitoring camera for monitoring traveling        vehicles and roads, and a distance sensor for measuring a        distance between vehicles and the like, for safe driving such as        automatic stop, recognition of driver's condition, and the like    -   An apparatus to be used for electric appliances, such as a TV, a        refrigerator, and an air conditioner to photograph user's        gesture and operate the appliances according to the gesture    -   An apparatus to be used for medical care and healthcare, such as        an endoscope or an apparatus for angiography by receiving        infrared light    -   An apparatus to be used for security, such as a monitoring        camera for crime prevention applications, or a camera for person        authentication applications    -   An apparatus to be used for beauty, such as a skin measuring        instrument for photographing skin, and a microscope for        photographing a scalp    -   An apparatus to be used for sports, such as a wearable camera or        an action camera for sports applications or the like    -   An apparatus to be used for agriculture, such as a camera for        monitoring conditions of fields and crops

Note that, in the specification, a system means an aggregation of aplurality of constituents (apparatus, module (component), and the like),and it does not matter whether or not all of the constituents are in thesame cabinet. Therefore, a plurality of apparatuses that is accommodatedin a separate cabinet and connected to each other via a network and oneapparatus that accommodates a plurality of modules in one cabinet areboth systems.

In addition, the embodiment of the present technology is not limited tothe embodiments described above, and various modifications are possiblewithout departing from the scope of the present technology.

Further, the advantageous effects described in the specification aremerely examples, and the advantageous effects of the present technologyare not limited to them and may include other effects.

In addition, for example, the present technology can also adopt thefollowing configuration.

(1)

A semiconductor chip including:

an image pickup device;

a transparent protective member that protects the image pickup device;

an IR cut film arranged between a light-receiving surface of the imagepickup device and the protective member;

a bonding layer that bonds the IR cut film and the protective membertogether; and

a protective film that covers side surfaces of the IR cut film and thebonding layer.

(2)

The semiconductor chip according to (1), in which

the protective film further covers at least a portion of a side surfaceof the image pickup device.

(3)

The semiconductor chip according to (1) or (2), in which

the IR cut film and the bonding layer each include an adhesive type IRcut film having adhesiveness, and

the image pickup device and the protective member are bonded togethervia the adhesive type IR cut film.

(4)

The semiconductor chip according to (1) or (2), in which

in the IR cut film, a plurality of films having respective differentlight-shielding wavelength bands is layered.

(5)

The semiconductor chip according to any of (1) to (4), in which

metal solder having a melting point of less than or equal to 150° C. isprovided on a surface to be soldered of the semiconductor chip.

(6)

The semiconductor chip according to any of (1) to (5), in which

a reflective type IR cut film is formed on at least one surface of theprotective member.

(7)

The semiconductor chip according to any of (1) to (6), in which

the IR cut film is a coating type.

(8)

An electronic apparatus including:

a semiconductor chip including

an image pickup device,

a transparent protective member that protects the image pickup device,

an IR cut film arranged between a light-receiving surface of the imagepickup device and the protective member;

a bonding layer that bonds the IR cut film and the protective membertogether, and

a protective film that covers side surfaces of the IR cut film and thebonding layer; and

a signal processing circuit that processes a signal from the imagepickup device.

(9)

A semiconductor chip including:

an image pickup device;

a transparent protective member that protects the image pickup device;and

an IR cut film arranged inside the protective member.

(10)

The semiconductor chip according to (9), in which

the protective member includes:

a first member including a planar groove in which the IR cut film isarranged, on a surface on an opposite side of the image pickup devicefrom a light-receiving surface side; and

a second member that seals the groove, and

a bonding layer that bonds the IR cut film and the second membertogether is further included.

(11)

An electronic apparatus including:

a semiconductor chip including

an image pickup device,

a transparent protective member that protects the image pickup device,and

an IR cut film arranged inside the protective member; and

a signal processing circuit that processes a signal from the imagepickup device.

(12)

A semiconductor chip including:

an image pickup device, and

a transparent resin film that is applied on a light-receiving surfaceside of the image pickup device and protects the image pickup device.

(13)

The semiconductor chip according to (12), in which a thickness of theresin film is less than 200 μm.

(14)

The semiconductor chip according to (12) or (13), in which

an IR cut film is arranged on the resin film.

(15)

The semiconductor chip according to (14), in which

an antireflection film is arranged on the IR cut film.

(16)

The semiconductor chip according to (15), in which

the antireflection film further surrounds side surfaces of the resinfilm and the IR cut film.

(17)

The semiconductor chip according to any of (12) to (16), in which

a diffraction grating is formed on a surface of the resin film.

(18)

The semiconductor chip according to (17), in which

the diffraction grating includes a slit-shaped light-shielding film.

(19)

The semiconductor chip according to any of (12) to (18), in which

a transparent film is arranged on an on-chip lens of the image pickupdevice, the transparent film having a refractive index smaller than amaterial of the on-chip lens.

(20)

An electronic apparatus including:

a semiconductor chip including

an image pickup device and

a transparent resin film that is applied on a light-receiving surfaceside of the image pickup device and protects the image pickup device;and

a signal processing circuit that processes a signal from the imagepickup device.

REFERENCE SIGNS LIST

-   10 a to 10 g Semiconductor chip-   11 Image sensor-   12 IR cut film-   13 Bonding layer-   14 Glass-   15 Protective film-   16 Solder ball-   51 Short IR cut film-   52 Long IR cut film-   61 Solder ball-   101, 102 Reflective type IR cut film-   121 Adhesive type IR cut film-   141 Image sensor-   142 Protective film-   202 Protective member-   202 a, 202 b Glass-   203 IR cut film-   204 Bonding layer-   300 a to 300 h Semiconductor chip-   301 Image sensor-   301A On-chip lens-   301B Color filter-   306 Transparent resin film-   307 IR cut film-   308, 309 Antireflection film-   310 Light-shielding film-   401 Temporary bonding resin-   402 Glass substrate-   403 Laminate tape-   500 Imaging apparatus-   502 Image pickup device-   503 Signal processing circuit

1. A semiconductor chip comprising: an image pickup device; atransparent protective member that protects the image pickup device; anIR cut film arranged between a light-receiving surface of the imagepickup device and the protective member; a bonding layer that bonds theIR cut film and the protective member together; and a protective filmthat covers side surfaces of the IR cut film and the bonding layer. 2.The semiconductor chip according to claim 1, wherein the protective filmfurther covers at least a portion of a side surface of the image pickupdevice.
 3. The semiconductor chip according to claim 1, wherein the IRcut film and the bonding layer each include an adhesive type IR cut filmhaving adhesiveness, and the image pickup device and the protectivemember are bonded together via the adhesive type IR cut film.
 4. Thesemiconductor chip according to claim 1, wherein in the IR cut film, aplurality of films having respective different light-shieldingwavelength bands is layered.
 5. The semiconductor chip according toclaim 1, wherein metal solder having a melting point of less than orequal to 150° C. is provided on a surface to be soldered of thesemiconductor chip.
 6. The semiconductor chip according to claim 1,wherein a reflective type IR cut film is formed on at least one surfaceof the protective member.
 7. The semiconductor chip according to claim1, wherein the IR cut film is a coating type.
 8. An electronic apparatuscomprising: a semiconductor chip including an image pickup device, atransparent protective member that protects the image pickup device, anIR cut film arranged between a light-receiving surface of the imagepickup device and the protective member; a bonding layer that bonds theIR cut film and the protective member together, and a protective filmthat covers side surfaces of the IR cut film and the bonding layer; anda signal processing circuit that processes a signal from the imagepickup device.
 9. A semiconductor chip comprising: an image pickupdevice; a transparent protective member that protects the image pickupdevice; and an IR cut film arranged inside the protective member. 10.The semiconductor chip according to claim 9, wherein the protectivemember includes: a first member including a planar groove in which theIR cut film is arranged, on a surface on an opposite side of the imagepickup device from a light-receiving surface side; and a second memberthat seals the groove, and a bonding layer that bonds the IR cut filmand the second member together is further included.
 11. An electronicapparatus comprising: a semiconductor chip including an image pickupdevice, a transparent protective member that protects the image pickupdevice, and an IR cut film arranged inside the protective member; and asignal processing circuit that processes a signal from the image pickupdevice.
 12. A semiconductor chip comprising: an image pickup device, anda transparent resin film that is applied on a light-receiving surfaceside of the image pickup device and protects the image pickup device.13. The semiconductor chip according to claim 12, wherein a thickness ofthe resin film is less than 200 μm.
 14. The semiconductor chip accordingto claim 12, wherein an IR cut film is arranged on the resin film. 15.The semiconductor chip according to claim 14, wherein an antireflectionfilm is arranged on the IR cut film.
 16. The semiconductor chipaccording to claim 15, wherein the antireflection film further surroundsside surfaces of the resin film and the IR cut film.
 17. Thesemiconductor chip according to claim 12, wherein a diffraction gratingis formed on a surface of the resin film.
 18. The semiconductor chipaccording to claim 17, wherein the diffraction grating includes aslit-shaped light-shielding film.
 19. The semiconductor chip accordingto claim 12, wherein a transparent film is arranged on an on-chip lensof the image pickup device, the transparent film having a refractiveindex smaller than a material of the on-chip lens.
 20. An electronicapparatus comprising: a semiconductor chip including an image pickupdevice and a transparent resin film that is applied on a light-receivingsurface side of the image pickup device and protects the image pickupdevice; and a signal processing circuit that processes a signal from theimage pickup device.